Muhammed Bolatkale

1. A 6GHz Multi-Path Multi-Frequency Chopping CTΔΣ Modulator achieving 122dBFS SFDR from 150kHz to 120MHz BW
   Javvaji, Sundeep; Bolatkale, Muhammed; Bajoria, Shagun; Rutten, Robert; Essink, Bert Oude; Beijens, Koen; Makinwa, Kofi; Breems, Lucien;
   In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
   pp. 1-2, 2023. DOI: 10.23919/VLSITechnologyandCir57934.2023.10185356

2. A 590 µW, 106.6 dB SNDR, 24 kHz BW Continuous-Time Zoom ADC with a Noise-Shaping 4-bit SAR ADC
   Mehrotra, Shubham; Eland, Efraïm; Karmakar, Shoubhik; Liu, Angqi; Gönen, Burak; Bolatkale, Muhammed; Van Veldhoven, Robert; Makinwa, Kofi A.A.;
   In ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC),
   pp. 253-256, 2022. DOI: 10.1109/ESSCIRC55480.2022.9911295

3. A 3.2mW SAR-assisted CTSD ADC with 77.5dB SNDR and 40MHz BW in 28nm CMOS
   P. Cenci; M. Bolatkale; R. Rutten; M. Ganzerli; G. Lassche; K. Makinwa; L. Breems;
   In Dig. Techn. Paper IEEE Symposium on VLSI Circuits (VLSI),
   6 2019. DOI: 10.23919/VLSIC.2019.8778176

4. A 3.2mW SAR-assisted CTSD ADC with 77.5dB SNDR and 40MHz BW in 28nm CMOS
   P. Cenci; M. Bolatkale; R. Rutten; M. Ganzerli; G. Lassche; K. Makinwa; L. Breems;
   In Dig. Techn. Paper IEEE Symposium on VLSI Circuits (VLSI),
   pp. C230-C231, 6 2019. DOI: 10.23919/VLSIC.2019.8778176

5. A 28 nm 2 GS/s 5-b Low-latency SAR ADC with gm-boosted StrongARM Comparator
   P. Cenci; M. Bolatkale; R. Rutten; G. Lassche; K. Makinwa; L. Breems;
   In European Solid-State Circuits Conference (ESSCIRC),
   2017. DOI: 10.1109/ESSCIRC.2017.8094553

6. A 28 nm 2 GS/s 5-b Low-latency SAR ADC with gm-boosted StrongARM Comparator
   P. Cenci; M. Bolatkale; R. Rutten; G. Lassche; K. Makinwa; L. Breems;
   In European Solid-State Circuits Conference (ESSCIRC),
   pp. 171-174, 2017. DOI: 10.1109/ESSCIRC.2017.8094553

7. A 4 GHz continuous-time ΔΣ ADC with 70 dB DR and -74 dBFS THD in 125 MHz BW
   M. Bolatkale; L.J. Breems; R. Rutten; K.A.A. Makinwa;
   IEEE Journal of Solid State Circuits,
   Volume 46, Issue 12, pp. 2857-2868, December 2011.

8. A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33μV/°C Offset Drift
   M. Bolatkale; M. A. P. Pertijs; W. J. Kindt; J. H. Huijsing; K. A. A. Makinwa;
   IEEE Journal of Solid-State Circuits,
   Volume 46, Issue 9, pp. 2099‒2107, September 2011. DOI: 10.1109/JSSC.2011.2139530
   
   Abstract: ...

   A MOS-input operational amplifier has a reconfigurable input stage that enables trimming of both offset and offset drift based only on single-temperature measurements. The input stage consists of a MOS differential pair, whose offset drift is predicted from offset voltage measurements made at well-defined bias currents. A theoretical motivation for this approach is presented and validated experimentally by characterizing the offset of pairs of discrete MOS transistors as a function of bias current and temperature. An opamp using the proposed single-temperature trimming technique has been designed and fabricated in a 0.5 μm BiCMOS process. After single-temperature trimming, it achieves a maximum offset of ± 30 μV and an offset drift of 0.33 μV/°C (3σ) over the temperature range of -40°C to +125°C.

9. A 4GHz CT Delta-Sigma ADC with 70dB DR and -74dBFS THD in 125MHz BW
   M. Bolatkale; L.J. Breems; R. Rutten; K.A.A. Makinwa;
   In A Chandrakasana; W Gass (Ed.), 2011 IEEE International Solid-State Circuits Conference (ISSCC),
   IEEE, pp. 470-472, 2011.

10. High-speed sigma-delta converters
    M. Bolatkale; L.J. Breems; K.A.A. Makinwa;
    s.n. (Ed.);
    ProRISC, , pp. 143-148, 2008.

11. A BiCMOS Operational Amplifier Achieving 0.33μV/°C Offset Drift using Room-Temperature Trimming
    M. Bolatkale; M. A. P. Pertijs; W. J. Kindt; J. H. Huijsing; K. A. A. Makinwa;
    In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
    IEEE, pp. 76‒77, February 2008. DOI: 10.1109/isscc.2008.4523064

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