MSc X. Shi

Guest
Electronic Instrumentation (EI), Department of Microelectronics

Themes: CMOS Image Sensors

Biography

Xiaolin Shi was born in Tianjin, China in 1992. She received the B.E. degree from the School of Electronic Information and Engineering, Tianjin University, Tianjin, China, in 2015. Since September 2015, she has been working on analog circuit design toward the Ph.D. degree at School of Microelectronics, Tianjin University. Her research interests are in analog circuit design for time-of-flight CMOS image sensor. Since September 2019, she has been a visiting Ph.D student in the Electronic Instrumentation Laboratory at TU Delft, where she focuses on the non-linearity of the quantum efficiency in the near-IR part of the spectrum.

Publications

  1. A Low-Power Area-Efficient SAR-Assisted Hybrid ADC for Ultrasound imaging
    Yixin Shi;
    MSc thesis, Delft University of Technology, August 2017.
    document

  2. Stability characterization of high-performance PureB Si-photodiodes under aggressive cleaning treatments in industrial applications
    V. Mohammadi; L. Shi; U. Kroth; C. Laubis; S. Nihtianov;
    In LG Franquelo; BM Wilamowski (Ed.), Proc. of the IEEE International Conference on Industrial Technology,
    IEEE, pp. 3370-3376, 2015. Harvest.

  3. Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental environment
    L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze;
    IEEE Sensors Journal,
    Volume 13, Issue 5, pp. 1699-1707, 2013. Online publicatie dd 20 december 2012.

  4. Performance analysis of Si-based ultra-shallow junction photodiodes for UV radiation detection
    L. Shi;
    PhD thesis, Delft University of Technology, 2013. Harvest.

  5. Surface-charge-collection-enhanced high-sensitivity high-stability silicon photodiodes for DUV and VUV spectral ranges
    L. Shi; S. Nihtianov; L. Haspeslagh; F. Scholze; A. Gottwald; L.K. Nanver;
    IEEE Transactions on Electron Devices,
    Volume 59, Issue 11, pp. 2888-2894, 2012. Harvest.

  6. Comparative study of silicon-based ultraviolet photodetectors
    L. Shi; S. Nihtianov;
    IEEE Sensors Journal,
    Volume 12, Issue 7, pp. 2453-2459, 2012. Harvest Article number: 6175098.

  7. Electrical and optical performance investigation of si-based ultrashallow-junction p+-n VUV/EUV photodiodes
    L. Shi; S. Nihtianov; S. Xia; L.K. Nanver; A. Gottwald; F. Scholze;
    IEEE Transactions on Instrumentation and Measurement,
    Volume 61, Issue 5, pp. 1268-1277, 2012. Harvest Article number: 6163408.

  8. Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application
    L. Shi; S. Nihtianov; F. Scholze; L.K. Nanver;
    In L Gomes; LG Chakraborty; D Irwin (Ed.), Proc. of the 38th Annual Conference on IEEE Industrial Electronics Society,
    IEEE, pp. 3952-3957, 2012.

  9. Series resistance optimization of high-sensitivity Si-based VUV photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; T. Knezevic; A. Gottwald; U. Kroth;
    In H Zhang; K. Lee; Y Yan; R Dyer (Ed.), Proc. of the IEEE International Instrumentation and Measurement Technology Conference,
    IEEE, pp. 1-4, 2011.

  10. Electrical performance optimization of a silicon-based EUV photodiode with hear-theoretical quantum efficiency
    L. Shi; L.K. Nanver; C. Laubis; F. Scholze; S. Nihtianov;
    In {Esashi et al.}, M; Z Zhou (Ed.), Proc. of the 16th International Conference on Solid-State Sensors, Actuators and Microsystems,
    IEEE, pp. 48-51, 2011.

  11. Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; T. Knezevic; A. Gottwald; U. Kroth;
    In H Zhang; K. Lee; Y Yan; R Dyer (Ed.), IEEE International Instrumentation and Measurement Technology Conference,
    IEEE, pp. 1-4, 2011.

  12. High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges
    L. Shi; S. Nihtianov; L.K. Nanver; F. Scholze; A. Gottwald;
    In OH Siegmund (Ed.), Proc. of the SPIE 8145, 81450N,
    SPIE, pp. 1-9, 2011.

  13. Stability characterization of high-sensitivity silicon-based EUV photodiodes in a detrimental industrial environment
    L. Shi; L.K. Nanver; S. Nihtianov;
    In X Yu; T Dillon; Y Ibrahim; E Chang (Ed.), Proc. of the 37th Annual Conference of the IEEE Industrial Electronics Society,
    IEEE, pp. 2651-2656, 2011.

  14. Pure boron chemical vapor deposited layers; A new material for silicon device processing
    L.K. Nanver; T.L.M. Scholtes; F. Sarubbi; W.B. De Boer; G. Lorito; A. Sakic; S. Milosavljevic; C. Mok Kai Rine; L. Shi; S. Nihtianov; K Buisman;
    In {Lojek et al}, B (Ed.), Proceedings 18th IEEE Conference on Advanced Thermal Processing of Semiconductors - RTP 2010,
    IEEE, pp. 136-139, 2010.

  15. Optical performance of B-layer ultra shallow junction silicon photodiodes in the VUV spectral range
    L. Shi; F. Sarubbi; L.K. Nanver; U. Krothc A; A. Gottwald; S. Nihtianov;
    In B Jakoby; M.J. Vellekoop (Ed.), Proceedings EuroSensors XXIV,
    Elsevier, pp. 633-636, 2010.

  16. Optical stability investigation of high performance silicon based VUV photodiodes
    L. Shi; L.K. Nanver; A. Sakic; S. Nihtianov; A. Gottwald; U. Krothc A;
    In T Kenny; G Fedder (Ed.), Proceedings IEEE Sensors Conference 2010,
    IEEE, pp. 132-135, 2010.

  17. VUV performance characterization of a silicon based ultrashallow junction photodiode
    L. Shi; S. Nihtianov; L.K. Nanver; U. Krothc A;
    In {French et al}, P (Ed.), Proceedings 13th SAFE Workshop of the STW.ICT Conference 2010,
    STW, pp. 158-161, 2010.

  18. high performance silicon based extreme ultraviolet radiation detector for industrial application
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; T.L.M. Scholtes; F. Scholze;
    s.n. (Ed.);
    IEEE, , pp. 1891-1896, 2009.

  19. Stability Investigation of High Performance Silicon-Based DUV/EUV Photodiodes
    L. Shi; F. Sarubbi; S. Nihtianov; L.K. Nanver; F. Scholze;
    In P.J. French (Ed.), Proc. of SAFE 2009,
    STW, pp. 530-533, 2009.

  20. Response time of shallow junction silicon photodiodes
    L. Shi; S. Xia; F. Sarubbi; R. Naulaerts; S. Nihtianov; L.K. Nanver;
    In s.n. (Ed.), Proceedings of Electronics 2008,
    Electronics 2008, pp. 21-26, 2008.

BibTeX support

Last updated: 10 Dec 2021

Xiaolin Shi

Alumnus
  • Left in 2020