Electronic Instrumentation Laboratory
Department of Microelectronics

MSc K. Souri

PhD student
Electronic Instrumentation (EI), Department of Microelectronics

PhD thesis (Nov 2016): Energy-Efficient Smart Temperature Sensors in CMOS Technology
Promotor: Kofi Makinwa

Expertise: Energy-Efficient Transistor-Based Smart Temperature Sensors for RFID Application

Themes: Precision Analog

Biography

Kamran Souri received his B.Sc. in Electronics and M.Sc. in Telecommunication Systems from Amirkabir University of Technology, Iran, in 2001 and 2004. From 2001 to 2007, he worked at PSP-Ltd, Tehran, Iran, designing embedded systems for use in high quality audio/video systems and KVM switches. In Sept. 2007 he joined the Electronic Instrumentation Laboratory, TU-Delft where he received an M.Sc. degree in Microelectronics (cum laude) in 2009. Between 2007 and 2009 he was the recipient of a Top Talent Fellowship from the same faculty. From 2008 to 2009 he did an internship with NXP Semiconductors, Eindhoven. In 2012, he received the IEEE Solid-State Circuits Society Predoctoral Achievement Award.

Publications

  1. Heater-Assisted Bandgap trimming of BJT-based Temperature-to-Digital converters
    B. Yousefzadeh; K. Souri; K.A.A. Makinwa;
    Patent, 10605676, 2020.

  2. Energy-Efficient Smart Temperature Sensors in CMOS Technology
    K. Souri; K.A.A. Makinwa;
    Springer, , 2018.

  3. Energy-Efficient Smart Temperature Sensors in CMOS Technology
    Souri, Kamran; Makinwa, Kofi;
    Springer, , 2018.

  4. Heater-assisted voltage calibration of digital temperature sensors
    B. Yousefzadeh; K. Souri; K. A. A. Makinwa;
    Patent, US15422687, 2018.

  5. Energy-Efficient Smart Temperature Sensors in CMOS Technology
    K. Souri;
    PhD thesis, Delft University of Technology, 2016.

  6. A 0.85V 600nW All-CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from -40 to 125°C
    K. Souri; Y. Chae; F. Thus; K.A.A. Makinwa;
    In LC Fujino; J Anderson; D Dunwell; V Gaudet; G Gulak; J Haslett; S Mirabbasi; K Pagiamtzis; KC. Smith (Ed.), Digest of Technical papers - 2014 IEEE International Solid-State Circuits Conference,
    IEEE, pp. 222-223, 2014. Harvest Session 12. Sensors, Mems, and Displays 12.7.

  7. ADC, a temperature sensor, a non-contact transponder, and a method of converting analog signals to digital signals
    K.A.A. Makinwa; K. Souri;
    Patent, US 8,665,130, March 2014.

  8. A 6.3 μW 20 bit incremental zoom-ADC with 6 ppm INL and 1 μV offset
    Y. Chae; K. Souri; K.A.A. Makinwa;
    IEEE Journal of Solid State Circuits,
    Volume 48, Issue 12, pp. 3019-3027, 2013. Harvest.

  9. A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C
    K. Souri; Y. Chae; K.A.A. Makinwa;
    IEEE Journal of Solid State Circuits,
    Volume 48, Issue 1, pp. 292-301, 2013. Published online Oktober 2012; printed version January 2013.

  10. A 6.3μW 20b incremental zoom-ADC with 6ppm INL and 1μV offset
    Y. Chae; K. Souri; K.A.A. Makinwa;
    In A Chandrakasan; B. Nauta (Ed.), Digest of Technical Papers - 2013 IEEE International Solid-State Circuits Conference (ISSCC 2013),
    IEEE, pp. 276-277, 2013. Harvest Session 15.

  11. A resistor-based temperature sensor for MEMS frequency references
    M. Shahmohammadi; K. Souri; K.A.A. Makinwa;
    In S. Rusu; Y. Deval (Ed.), Proceedings 39th European Solid-State Circuits Conference,
    IEEE, pp. 225-228, 2013. Harvest.

  12. A 40µW CMOS temperature sensor with an inaccuracy of ±0.4°C (3σ) from -55°C to 200°C
    K. Souri; K Souri; K.A.A. Makinwa;
    In S. Rusu; Y. Deval (Ed.), Proceedings 39th European Solid-State Circuits Conference,
    IEEE, pp. 221-224, 2013. Harvest.

  13. A scaled thermal-diffusivity-based 16 MHz frequency reference in 0.16 μm CMOS
    S.M. Kashmiri; K. Souri; K.A.A. Makinwa;
    IEEE Journal of Solid State Circuits,
    Volume 47, Issue 7, pp. 1535-1545, July 2012. Harvest Article number: 6216450.

  14. A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C
    K. Souri; Y. Chae; K.A.A. Makinwa;
    In L Fujino (Ed.), Digest of Technical Papers - 2012 IEEE International Solid-state Circuits Conference,
    IEEE, pp. 208-210, February 2012. Harvest Article number: 6176978.

  15. A 0.12 mm2 7.4 μ W micropower temperature sensor with an inaccuracy of ±0.2°C (3σ) from -30°C to 125°C
    K. Souri; K.A.A. Makinwa;
    IEEE Journal of Solid State Circuits,
    Volume 46, Issue 7, pp. 1693-1700, July 2011.

  16. Ramp Calibration of Temperature Sensors
    K. Souri; K.A.A. Makinwa;
    In {De Venuto}, D; {L. Benini} (Ed.), 2011 IEEE 4th International Workshop on Advances in Sensors and Interfaces (IWASI),
    IEEE, pp. 67-70, 2011.

  17. A precision DTMOST-based temperature sensor
    K. Souri; Y. Chae; Y. Ponomarev; K.A.A. Makinwa;
    In H Schmidt; C Papavassiliou (Ed.), Proceedings 2011 European Solid-State Circuits Conference,
    IEEE, pp. 279-282, 2011.

  18. A scaled thermal-diffusivity-based frequency reference in 0.16 um CMOS
    S.M. Kashmiri; K. Souri; K.A.A. Makinwa;
    In H Tenhunen; M Aberg (Ed.), 37th European Soldi-State Circuits Conference 2011, (ESSCIRC),
    IEEE, pp. 503-506, 2011.

  19. A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications
    Z. Tan; R. Daamen; A. Humbert; K. Souri; Y. Chae; Y. V. Ponomarev; M. A. P. Pertijs;
    In Proc. IEEE Asian Solid State Circuits Conference (A-SSCC),
    IEEE, pp. 105‒108, November 2011. DOI: 10.1109/ASSCC.2011.6123615
    Abstract: ... A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1\% RH in the range of 20\% to 90\% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.

  20. A high PSRR bandgap voltage reference with virtually diode-connected MOS transistors.
    K. Souri; H. Shamsi; M. Kazemi; Kamran Souri;
    IEICE Transactions on Electronics,
    Volume E93-C, Issue 12, pp. 1708-1712, 2010.

  21. A 0.12mm² 7.4µW micropower temperature sensor with an inaccuracy of 0.2°C(3-sigma) from -30°C to 125°C
    K. Souri; K.A.A. Makinwa;
    In {Guerra-Vinuesa et al}, O (Ed.), Unknown,
    ESSCIRC/ESSDERC, pp. 282-285, 2010.

  22. A high PSRR bandgap voltage reference with virtually diode-connected MOS transistors
    K. Souri; H. Shamsi; M. Kazemi; Kianoush Souri;
    In s.n. (Ed.), Proceedings of NEWCAS,
    NEWCAS, pp. 301-304, 2010.

  23. A CMOS temperature sensor with an energy-efficient zoom ADC and an inaccuracy of ±0.25°C (3¿) from -40°C to 125°C
    K. Souri; S.M. Kashmiri; K.A.A. Makinwa;
    In 2010 IEEE International solid-state circuits conference; Digest of technical papers (ISSCC) 2010,
    IEEE, pp. 310-311, 2010.

  24. An energy efficient smart temperature sensor for RFID
    K. Souri;
    PhD thesis, Delft University of Technology, 2009.

BibTeX support

Last updated: 26 Sep 2018

Kamran Souri

Alumnus
  • Left in 2016