MSc J.A. Angevare

1. A 210 nW NPN-Based Temperature Sensor With an Inaccuracy of ±0.15 °C (3σ) From −15 °C to 85 °C Utilizing Dual-Mode Frontend
   Someya, Teruki; van Hoek, Vincent; Angevare, Jan; Pan, Sining; Makinwa, Kofi;
   IEEE Solid-State Circuits Letters,
   Volume 5, pp. 272-275, 2022. DOI: 10.1109/LSSC.2022.3222578

2. A 0.9-V 28-MHz Highly Digital CMOS Dual-RC Frequency Reference With ±200 ppm Inaccuracy From −40 °C to 85 °C
   Choi, Woojun; Angevare, Jan; Park, Injun; Makinwa, Kofi A. A.; Chae, Youngcheol;
   IEEE Journal of Solid-State Circuits,
   Volume 57, Issue 8, pp. 2418-2428, 2022. DOI: 10.1109/JSSC.2021.3135939

3. A 210nW BJT-based Temperature Sensor with an Inaccuracy of ±0.15°C (3σ) from −15°C to 85°C
   Someya, Teruki; Van Hoek, Vincent; Angevare, Jan; Pan, Sining; Makinwa, Kofi;
   In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
   pp. 120-121, 2022. DOI: 10.1109/VLSITechnologyandCir46769.2022.9830266

4. A 0.9V 28MHz Dual-RC Frequency Reference with 5pJ/Cycle and ±200 ppm Inaccuracy from -40°C to 85°C
   W. Choi; J. A. Angevare; I. Park; K. A. A. Makinwa; Y. Chae;
   In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
   February 2021. DOI: 10.1109/ISSCC42613.2021.9366021

5. A Highly Digital 2210μm2 Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS
   J. A. Angevare; Y. Chae; K. A. A. Makinwa;
   In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
   February 2021. DOI: 10.1109/ISSCC42613.2021.9365995

6. A Highly Digital 2210μm2 Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS
   J. A. Angevare; Y. Chae; K. A. A. Makinwa;
   In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
   pp. 76-78, February 2021. DOI: 10.1109/ISSCC42613.2021.9365995

7. A 0.9V 28MHz Dual-RC Frequency Reference with 5pJ/Cycle and ±200 ppm Inaccuracy from -40°C to 85°C
   W. Choi; J. A. Angevare; I. Park; K. A. A. Makinwa; Y. Chae;
   In Dig. Techn. Papers IEEE International Solid-State Circuits Conference (ISSCC),
   pp. 434-436, February 2021. DOI: 10.1109/ISSCC42613.2021.9366021

8. A 6800‐μm² Resistor‐Based Temperature Sensor in 180‐nm CMOS
   J. Angevare; K.A.A. Makinwa;
   IEEE Journal of Solid-State Circuits,
   Volume 54, pp. 2649-2657, 10 2019. DOI: 10.1109/JSSC.2019.2921450
   
   Abstract: ...

   This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μm 2 , thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3σ) inaccuracy from -35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1σ) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.

9. A 6800‐μm² Resistor‐Based Temperature Sensor in 180‐nm CMOS
   J. Angevare; K.A.A. Makinwa;
   IEEE Journal of Solid-State Circuits,
   Volume 54, Issue 10, pp. 2649-2657, 10 2019. DOI: 10.1109/JSSC.2019.2921450
   
   Abstract: ...

   This paper describes a compact resistor-based temperature sensor that has been realized in a 180-nm CMOS process. It occupies only 6800 μm 2 , thanks to the use of a highly digital voltage-controlled oscillator (VCO)-based phase-domain sigma-delta modulator, whose loop filter consists of a compact digital counter. Despite its small size, the sensor achieves ±0.35 °C (3σ) inaccuracy from -35 °C to 125 °C. Furthermore, it achieves 0.12 °C (1σ) resolution at 2.8 kSa/s, which is mainly limited by the time-domain quantization imposed by the counter.

10. A 6800‐μm2 Resistor‐Based Temperature Sensor in 180‐nm CMOS
    Jan Angevare; Kofi A. A. Makinwa;
    In Proc. IEEE Asian Solid-State Circuits Conference (ASSCC),
    11 2018. DOI: 10.1109/ASSCC.2018.8579332

11. A 6800‐μm2 Resistor‐Based Temperature Sensor in 180‐nm CMOS
    Jan Angevare; Kofi A. A. Makinwa;
    In Proc. IEEE Asian Solid-State Circuits Conference (ASSCC),
    pp. 43-46, 11 2018. DOI: 10.1109/ASSCC.2018.8579332

12. A 2800-µm² Thermal-Diffusivity Temperature Sensor with VCO-Based Readout in 160-nm CMOS
    Jan Angevare; Lorenzo Pedalà; Ugur Sonmez; Fabio Sebastiano; Kofi A.A. Makinwa;
    In Asian Solid-state Circuits Conference Digest of Technical Papers,
    Xiamen, China, pp. 1-4, Nov 2015. DOI: 10.1109/ASSCC.2015.7387444
    
    Keywords: ...

    CMOS digital integrated circuits;analogue-digital conversion;computerised monitoring;digital readout;temperature sensors;thermal diffusivity;voltage-controlled oscillators;VCO-based phase-domain ADC;VCO-based readout;bulk silicon;digital circuitry;highly digital temperature sensor;microprocessors;size 160 nm;standard CMOS process;systems-on-chip;temperature -35 degC to 125 degC;temperature-dependent thermal diffusivity;thermal monitoring;CMOS integrated circuits;CMOS process;Heating;Radiation detectors;Temperature measurement;Temperature sensors.
    
    
    Abstract: ...

    A highly digital temperature sensor based on the temperature-dependent thermal diffusivity of bulk silicon has been realized in a standard 160-nm CMOS process. The sensor achieves an inaccuracy of �2.9�C (3a) from -35�C to 125�C with no trimming and �1.2�C (3a) after a single-point trim, while achieving a resolution of 0.47�C (rms) at 1 kSa/s. Its compact area (2800 �m2) is enabled by the adoption of a VCO-based phase-domain ADC. Since 53% of the sensor area is occupied by digital circuitry, the sensor can be easily ported to more advanced CMOS technologies with further area reduction, which makes it well suited for thermal monitoring in microprocessors and other systems-on-chip.

13. A Highly-Scalable Thermal-Diffusivity-Based Temperature Sensor
    J. Angevare;
    MSc thesis, Delft University of Technology, 12 2015.

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